Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology.
J Electrochem Soc
; 166(1)2018.
Article
en En
| MEDLINE
| ID: mdl-33041354
ABSTRACT
An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 µm deep and nominally 125 µm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO4 -0.25 mol/L CH3SO3H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented.
Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Tipo de estudio:
Qualitative_research
Idioma:
En
Revista:
J Electrochem Soc
Año:
2018
Tipo del documento:
Article
País de afiliación:
Estados Unidos