Sequential conversion from line defects to atomic clusters in monolayer WS<sub>2</sub>.

Ryu, Gyeong Hee; Chan, Ren-Jie

Sequential conversion from line defects to atomic clusters in monolayer WS₂.

Ryu, Gyeong Hee; Chan, Ren-Jie.

Afiliación

Ryu GH; School of Materials Science and Engineering, Gyeongsang National University, Jinju, 52828, Republic of Korea. gh.ryu@gnu.ac.kr.
Chan RJ; Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK.

Appl Microsc ; 50(1): 27, 2020 Nov 30.

Article en En | MEDLINE | ID: mdl-33580451

Palabras clave

ADF-STEM; Cluster; Hole; Line defect; WS2

Texto completo

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818298
https://dx.doi.org/10.1186/s42649-020-00047-2

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Appl Microsc Año: 2020 Tipo del documento: Article

Texto completo

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818298
https://dx.doi.org/10.1186/s42649-020-00047-2

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Appl Microsc Año: 2020 Tipo del documento: Article