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High-Performance CVD Bilayer MoS2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics.
Gao, Qingguo; Zhang, Chongfu; Yang, Kaiqiang; Pan, Xinjian; Zhang, Zhi; Yang, Jianjun; Yi, Zichuan; Chi, Feng; Liu, Liming.
Afiliación
  • Gao Q; School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
  • Zhang C; School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Yang K; School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
  • Pan X; School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Zhang Z; School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
  • Yang J; School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
  • Yi Z; School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
  • Chi F; School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
  • Liu L; School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
Micromachines (Basel) ; 12(4)2021 Apr 16.
Article en En | MEDLINE | ID: mdl-33923705

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2021 Tipo del documento: Article País de afiliación: China