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Defect Etching of Phase-Transition-Assisted CVD-Grown 2H-MoTe2.
Zhou, Yaoqiang; Tao, Li; Chen, Zefeng; Lai, Haojie; Xie, Weiguang; Xu, Jian-Bin.
Afiliación
  • Zhou Y; Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
  • Tao L; Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
  • Chen Z; Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
  • Lai H; Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, China.
  • Xie W; Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, China.
  • Xu JB; Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.
Small ; 17(32): e2102146, 2021 Aug.
Article en En | MEDLINE | ID: mdl-34212490
ABSTRACT
2D molybdenum ditelluride (MoTe2 ) with polymorphism is a promising candidate to developing phase-change memory, high-performance transistors and spintronic devices. The phase-transition-assisted chemical vapor deposition (CVD) process has been used to prepare large-scale 2H-MoTe2 with large grain size and low density of grain boundary. However, because of the lack of precise control of the growth condition, some defects including the amorphous regions and grain boundaries in 2H-MoTe2 are hardly avoidable. Here, a facile method of selectively etching defects in large-scale CVD-grown 2H-MoTe2 by triiodide ion (I3 - ) solution is reported. The defect etching is attributed to the reduced lattice symmetry, high chemisorption activity and high conductivity of the defects due to the high density of Te vacancies. The treated 2H-MoTe2 shows the suppressed hysteresis in the electrical transfer curve, enhances hole mobility and the higher effective barrier height on the metal contact, suggesting the decreased density of defects. Further chemical analysis indicates that the 2H-MoTe2 is not damaged or doped by I3 - solution during the etching process. This simple and low-cost post-processing method is effective for etching the defects in large-area 2H-MoTe2 for high-performance device applications.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Small Asunto de la revista: ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article País de afiliación: China