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Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator.
Guo, Liangchao; Mu, Boyuan; Li, Ming-Zheng; Yang, Baidong; Chen, Ruo-Si; Ding, Guanglong; Zhou, Kui; Liu, Yanhua; Kuo, Chi-Ching; Han, Su-Ting; Zhou, Ye.
Afiliación
  • Guo L; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
  • Mu B; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
  • Li MZ; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • Yang B; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
  • Chen RS; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
  • Ding G; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • Zhou K; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • Liu Y; Shanghai Institute of Space Power-Sources, Shanghai 200245, P. R. China.
  • Kuo CC; Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan.
  • Han ST; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
  • Zhou Y; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
ACS Appl Mater Interfaces ; 13(33): 39595-39605, 2021 Aug 25.
Article en En | MEDLINE | ID: mdl-34378376
ABSTRACT
Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO2 nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2021 Tipo del documento: Article