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Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range.
Wu, Jianghong; Ma, Hui; Zhong, Chuyu; Wei, Maoliang; Sun, Chunlei; Ye, Yuting; Xu, Yan; Tang, Bo; Luo, Ye; Sun, Boshu; Jian, Jialing; Dai, Hao; Lin, Hongtao; Li, Lan.
Afiliación
  • Wu J; State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Ma H; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China.
  • Zhong C; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China.
  • Wei M; State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Sun C; MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China.
  • Ye Y; State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Xu Y; MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China.
  • Tang B; State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Luo Y; MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China.
  • Sun B; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China.
  • Jian J; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China.
  • Dai H; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China.
  • Lin H; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China.
  • Li L; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China.
Nano Lett ; 22(16): 6816-6824, 2022 08 24.
Article en En | MEDLINE | ID: mdl-35787028
ABSTRACT
Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz-0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s-1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Asunto principal: Telecomunicaciones Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Asunto principal: Telecomunicaciones Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article País de afiliación: China