Improved Ultrafast Carrier Relaxation and Charge Transfer Dynamics in CuI Films and Their Heterojunctions via Sn Doping.

Li, Zhongguo; Wu, Haijuan; Cao, Hongtao; Liang, Lingyan; Han, Yanbing; Yang, Junyi; Song, Yinglin; Burda, Clemens

Li, Zhongguo; Wu, Haijuan; Cao, Hongtao; Liang, Lingyan; Han, Yanbing; Yang, Junyi; Song, Yinglin; Burda, Clemens.

Afiliación

Li Z; School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China.
Wu H; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Cao H; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Liang L; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Han Y; Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
Yang J; School of Physical Science and Technology, Soochow University, Suzhou 215006, China.
Song Y; Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
Burda C; Department of Chemistry, College of Arts and Sciences, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, United States.

J Phys Chem Lett ; 13(39): 9072-9078, 2022 Oct 06.

Article en En | MEDLINE | ID: mdl-36154177

Texto completo

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: J Phys Chem Lett Año: 2022 Tipo del documento: Article País de afiliación: China

Texto completo

Imprimir

XML

PubMed Links

Buscar en Google