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Wafer-Scale Room-Temperature Bonding of Smooth Au/Ti-Based Getter Layer for Vacuum Packaging.
Matsumae, Takashi; Kariya, Shingo; Kurashima, Yuichi; Thu, Le Hac Huong; Higurashi, Eiji; Hayase, Masanori; Takagi, Hideki.
Afiliación
  • Matsumae T; Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan.
  • Kariya S; Graduate School of Science and Technology, Tokyo University of Science, Chiba 278-8510, Japan.
  • Kurashima Y; Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan.
  • Thu LHH; Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan.
  • Higurashi E; Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8564, Japan.
  • Hayase M; Graduate School of Engineering, Tohoku University, Miyagi 980-8579, Japan.
  • Takagi H; Graduate School of Science and Technology, Tokyo University of Science, Chiba 278-8510, Japan.
Sensors (Basel) ; 22(21)2022 Oct 24.
Article en En | MEDLINE | ID: mdl-36365842
ABSTRACT
This study demonstrates room-temperature bonding using a getter layer for the vacuum packaging of microsystems. A thick Ti layer covered with an Au layer is utilized as a getter layer because it can absorb gas molecules in the package. Additionally, smooth Au surfaces can form direct bonds for hermetic sealing at room temperature. Direct bonding using a getter layer can simplify the vacuum packaging process; however, typical getter layers are rough in bonding formation. This study demonstrates two fabrication techniques for smooth getter layers. In the first approach, the Au/Ti layer is bonded to an Au layer on a smooth SiO2 template, and the Au/SiO2 interface is mechanically exfoliated. Although the root-mean-square roughness was reduced from 2.00 to 0.98 nm, the surface was still extremely rough for direct bonding. In the second approach, an Au/Ti/Au multilayer on a smooth SiO2 template is bonded with a packaging substrate, and the Au/SiO2 interface is exfoliated. The transferred Au/Ti/Au getter layer has a smooth surface with the root-mean-square roughness of 0.54 nm and could form wafer-scale direct bonding at room temperature. We believe that the second approach would allow a simple packaging process using direct bonding of the getter layer.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Japón

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2022 Tipo del documento: Article País de afiliación: Japón