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Resonant thermal Hall effect of phonons coupled to dynamical defects.
Guo, Haoyu; Joshi, Darshan G; Sachdev, Subir.
Afiliación
  • Guo H; Department of Physics, Harvard University, Cambridge, MA 02138.
  • Joshi DG; Department of Physics, Harvard University, Cambridge, MA 02138.
  • Sachdev S; Department of Physics, Harvard University, Cambridge, MA 02138.
Proc Natl Acad Sci U S A ; 119(46): e2215141119, 2022 Nov 15.
Article en En | MEDLINE | ID: mdl-36367907
ABSTRACT
We present computations of the thermal Hall coefficient of phonons scattering off a defect with multiple energy levels. Using a microscopic formulation based on the Kubo formula, we find that the leading contribution perturbative in the phonon-defect coupling is proportional to the phonon lifetime and has a "side-jump" interpretation. Consequently, the thermal Hall angle is independent of the phonon lifetime. The contribution to the thermal Hall coefficient is at resonance when the phonon energy equals a defect-level spacing. Our results are obtained for three different defect models, which apply to different correlated electron materials. For the pseudogap regime of the cuprates, we propose a model of phonons coupled to an impurity quantum spin in the presence of quasistatic magnetic order with an isotropic Zeeman coupling to the applied field and without spin-orbit interaction.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2022 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2022 Tipo del documento: Article