Sub-Nanosecond Switching of Si:HfO<sub>2</sub> Ferroelectric Field-Effect Transistor.

Dahan, Mor Mordechai; Mulaosmanovic, Halid; Levit, Or; Dünkel, Stefan; Beyer, Sven; Yalon, Eilam

Sub-Nanosecond Switching of Si:HfO₂ Ferroelectric Field-Effect Transistor.

Dahan, Mor Mordechai; Mulaosmanovic, Halid; Levit, Or; Dünkel, Stefan; Beyer, Sven; Yalon, Eilam.

Afiliación

Dahan MM; Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Mulaosmanovic H; GlobalFoundries Fab1 LLC & Co. KG, 01109 Dresden, Germany.
Levit O; Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Dünkel S; GlobalFoundries Fab1 LLC & Co. KG, 01109 Dresden, Germany.
Beyer S; GlobalFoundries Fab1 LLC & Co. KG, 01109 Dresden, Germany.
Yalon E; Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel.

Nano Lett ; 23(4): 1395-1400, 2023 Feb 22.

Article en En | MEDLINE | ID: mdl-36763845

Palabras clave

Ferroelectric field effect transistor (FeFET); HfO2; high-speed memory; neuromorphic devices; nonvolatile memory; subnanosecond switching

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2023 Tipo del documento: Article País de afiliación: Israel

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