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Toughening Thermoelectric Materials: From Mechanisms to Applications.
Wu, Luoqi; Feng, Xiaobin; Cao, Ke; Li, Guodong.
Afiliación
  • Wu L; Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China.
  • Feng X; Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China.
  • Cao K; School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China.
  • Li G; Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan 430070, China.
Int J Mol Sci ; 24(7)2023 Mar 28.
Article en En | MEDLINE | ID: mdl-37047298
ABSTRACT
With the tendency of thermoelectric semiconductor devices towards miniaturization, integration, and flexibility, there is an urgent need to develop high-performance thermoelectric materials. Compared with the continuously enhanced thermoelectric properties of thermoelectric materials, the understanding of toughening mechanisms lags behind. Recent advances in thermoelectric materials with novel crystal structures show intrinsic ductility. In addition, some promising toughening strategies provide new opportunities for further improving the mechanical strength and ductility of thermoelectric materials. The synergistic mechanisms between microstructure-mechanical performances are expected to show a large set of potential applications in flexible thermoelectric devices. This review explores enlightening research into recent intrinsically ductile thermoelectric materials and promising toughening strategies of thermoelectric materials to elucidate their applications in the field of flexible thermoelectric devices.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Asunto principal: Semiconductores Idioma: En Revista: Int J Mol Sci Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Asunto principal: Semiconductores Idioma: En Revista: Int J Mol Sci Año: 2023 Tipo del documento: Article País de afiliación: China