Nanocrystal Materials for Resistive Memory and Artificial Synapses: Progress and Prospects.

Chen, Yingchun; Chen, Dunkui; Zhang, Chi; Zhang, Xian

Chen, Yingchun; Chen, Dunkui; Zhang, Chi; Zhang, Xian.

Afiliación

Chen Y; National Intellectual Property Information Service Center of HUST, Huazhong University of Science and Technology Library, Wuhan 430074, P.R. China.
Chen D; National Intellectual Property Information Service Center of HUST, Huazhong University of Science and Technology Library, Wuhan 430074, P.R. China.
Zhang C; National Intellectual Property Information Service Center of HUST, Huazhong University of Science and Technology Library, Wuhan 430074, P.R. China.
Zhang X; National Intellectual Property Information Service Center of HUST, Huazhong University of Science and Technology Library, Wuhan 430074, P.R. China.

Recent Pat Nanotechnol ; 18(2): 237-255, 2024.

Article en En | MEDLINE | ID: mdl-37069716

Palabras clave

Nanocrystal materials; artificial synaptic devices.; metal nanocrystals; neuromorphic devices; resistive memories; semiconductor nanocrystals

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Tipo de estudio: Qualitative_research Idioma: En Revista: Recent Pat Nanotechnol Año: 2024 Tipo del documento: Article

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