Statistical analysis of the performance of a variety of first-principles schemes for accurate prediction of binary semiconductor band gaps.

Abedi, Saeid; Tarighi Ahmadpour, Mahdi; Baninajarian, Samira; Kahnouji, Hamideh; Hashemifar, S Javad; Han, Zhong-Kang; Levchenko, Sergey V

Abedi, Saeid; Tarighi Ahmadpour, Mahdi; Baninajarian, Samira; Kahnouji, Hamideh; Hashemifar, S Javad; Han, Zhong-Kang; Levchenko, Sergey V.

Afiliación

Abedi S; Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran.
Tarighi Ahmadpour M; Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran.
Baninajarian S; Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran.
Kahnouji H; Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran.
Hashemifar SJ; Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran.
Han ZK; Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia.
Levchenko SV; Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia.

J Chem Phys ; 158(18)2023 May 14.

Article en En | MEDLINE | ID: mdl-37158329

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies / Risk_factors_studies Idioma: En Revista: J Chem Phys Año: 2023 Tipo del documento: Article País de afiliación: Irán

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