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Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors.
Kim, Kwan-Ho; Oh, Seyong; Fiagbenu, Merrilyn Mercy Adzo; Zheng, Jeffrey; Musavigharavi, Pariasadat; Kumar, Pawan; Trainor, Nicholas; Aljarb, Areej; Wan, Yi; Kim, Hyong Min; Katti, Keshava; Song, Seunguk; Kim, Gwangwoo; Tang, Zichen; Fu, Jui-Han; Hakami, Mariam; Tung, Vincent; Redwing, Joan M; Stach, Eric A; Olsson, Roy H; Jariwala, Deep.
Afiliación
  • Kim KH; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Oh S; Division of Electrical Engineering, Hanyang University ERICA, Ansan, South Korea.
  • Fiagbenu MMA; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Zheng J; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Musavigharavi P; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Kumar P; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Trainor N; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Aljarb A; Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA.
  • Wan Y; Department of Physics, King Abdulaziz University, Jeddah, Saudi Arabia.
  • Kim HM; Department of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.
  • Katti K; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Song S; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Kim G; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Tang Z; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Fu JH; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Hakami M; Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan.
  • Tung V; Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan.
  • Redwing JM; Department of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.
  • Stach EA; Department of Chemical System Engineering, University of Tokyo, Tokyo, Japan.
  • Olsson RH; Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA.
  • Jariwala D; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA.
Nat Nanotechnol ; 18(9): 1044-1050, 2023 Sep.
Article en En | MEDLINE | ID: mdl-37217764
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nat Nanotechnol Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nat Nanotechnol Año: 2023 Tipo del documento: Article País de afiliación: Estados Unidos