Your browser doesn't support javascript.
loading
Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling Diodes.
Zhang, Zihao; Zhang, Baoqing; Wang, Yiming; Wang, Mingyang; Zhang, Yifei; Li, Hu; Zhang, Jiawei; Song, Aimin.
Afiliación
  • Zhang Z; Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China.
  • Zhang B; Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China.
  • Wang Y; Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China.
  • Wang M; Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China.
  • Zhang Y; Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China.
  • Li H; Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China.
  • Zhang J; Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China.
  • Song A; Suzhou Research Institute, Shandong University, Suzhou 215123, China.
Nano Lett ; 23(17): 8132-8139, 2023 Sep 13.
Article en En | MEDLINE | ID: mdl-37668256
Palabras clave
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2023 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2023 Tipo del documento: Article País de afiliación: China