Your browser doesn't support javascript.
loading
Spin Quantum Dot Light-Emitting Diodes Enabled by 2D Chiral Perovskite with Spin-Dependent Carrier Transport.
Wang, Qingqian; Zhu, Hongmei; Tan, Yangzhi; Hao, Junjie; Ye, Taikang; Tang, Haodong; Wang, Zhaojin; Ma, Jingrui; Sun, Jiayun; Zhang, Tianqi; Zheng, Fankai; Zhang, Wenda; Choi, Hoi Wai; Choy, Wallace C H; Wu, Dan; Sun, Xiao Wei; Wang, Kai.
Afiliación
  • Wang Q; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhu H; Institute of Physics, Henan Academy of Sciences, Zhengzhou, 450046, China.
  • Tan Y; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Hao J; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Ye T; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China.
  • Tang H; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Wang Z; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, 518118, China.
  • Ma J; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Sun J; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhang T; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, 518118, China.
  • Zheng F; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhang W; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Choi HW; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Choy WCH; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China.
  • Wu D; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Sun XW; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Wang K; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Adv Mater ; 36(5): e2305604, 2024 Feb.
Article en En | MEDLINE | ID: mdl-37789724
ABSTRACT
Chiral-induced spin selectivity (CISS) effect provides innovative approach to spintronics and quantum-based devices for chiral materials. Different from the conventional ferromagnetic devices, the application of CISS effect is potential to operate under room temperature and zero applied magnetic field. Low dimensional chiral perovskites by introducing chiral amines are beginning to show significant CISS effect for spin injection, but research on chiral perovskites is still in its infancy, especially on spin-light emitting diode (spin-LED) construction. Here, the spin-QLEDs enabled by 2D chiral perovskites as CISS layer for spin-dependent carrier injection and CdSe/ZnS quantum dots (QDs) as light emitting layer are reported. The regulation pattern of the chirality and thickness of chiral perovskites, which affects the circularly polarized electroluminescence (CP-EL) emission of spin-QLED, is discovered. Notably, the spin injection polarization of 2D chiral perovskites is higher than 80% and the CP-EL asymmetric factor (gCP-EL ) achieves up to 1.6 × 10-2 . Consequently, this work opens up a new and effective approach for high-performance spin-LEDs.
Palabras clave
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: China