Modulating the electronic properties and band alignments of the arsenene/MoSi2N4 van der Waals heterostructure via applying strain and electric field.

Zhao, Jun; Qi, Yunxi; Yao, Can; Zeng, Hui

Modulating the electronic properties and band alignments of the arsenene/MoSi₂N₄ van der Waals heterostructure via applying strain and electric field.

Zhao, Jun; Qi, Yunxi; Yao, Can; Zeng, Hui.

Afiliación

Zhao J; New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China. zhaojun@njupt.edu.cn.
Qi Y; New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China. zhaojun@njupt.edu.cn.
Yao C; New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China. zhaojun@njupt.edu.cn.
Zeng H; School of Microelectronics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China. zenghui@njust.edu.cn.

Phys Chem Chem Phys ; 25(48): 33023-33030, 2023 Dec 13.

Article en En | MEDLINE | ID: mdl-38032541

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2023 Tipo del documento: Article País de afiliación: China

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