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Resonant tunnelling features in quantum dots.
Escott, C C; Zwanenburg, F A; Morello, A.
Afiliação
  • Escott CC; Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW 2052, Australia.
Nanotechnology ; 21(27): 274018, 2010 Jul 09.
Article em En | MEDLINE | ID: mdl-20571205
ABSTRACT
We present a systematic review of features due to resonant electron tunnelling, observable in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot (orbital, spin and valley states) as well as extrinsic effects (phonon/photon emission/absorption, features in the charge reservoirs, coupling to nearby charge centres). We focus on the most common operating conditions, neglecting effects due to strong coupling to the leads. By discussing the experimental signatures of each type of feature, we aim at providing practical methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or to predict the performance of the dot for quantum information processing.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2010 Tipo de documento: Article País de afiliação: Austrália

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2010 Tipo de documento: Article País de afiliação: Austrália