Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device.
Nanotechnology
; 22(25): 254023, 2011 Jun 24.
Article
em En
| MEDLINE
| ID: mdl-21572200
ABSTRACT
We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Tamanho da Partícula
/
Titânio
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Potenciais de Ação
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Nanotecnologia
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Biomimética
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Nanoestruturas
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Memória
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Plasticidade Neuronal
Tipo de estudo:
Prognostic_studies
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2011
Tipo de documento:
Article