Intramolecular hole transfer at sensitized TiO2 interfaces.
J Am Chem Soc
; 134(20): 8352-5, 2012 May 23.
Article
em En
| MEDLINE
| ID: mdl-22548379
ABSTRACT
Three ruthenium compounds with triphenyl amine donors were anchored to nanocrystalline TiO(2) thin films for interfacial electron-transfer studies. Molecular tuning of reduction potentials enabled the extent of hole transfer from the photo-oxidized ruthenium center to the triphenyl amine to be tuned from zero to unity. Kinetic data revealed two new insights into the unwanted interfacial recombination reaction of the injected electrons with the oxidized compounds. First, recombination was highly sensitive to the concentration of oxidized compounds present at the interface. Second, a significant enhancement of the open circuit photovoltage was realized without a change in the recombination kinetics, behavior attributed to translation of the hole away from the interface thereby generating a larger surface dipole.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
J Am Chem Soc
Ano de publicação:
2012
Tipo de documento:
Article
País de afiliação:
Canadá