ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application.
ACS Nano
; 6(9): 8407-14, 2012 Sep 25.
Article
em En
| MEDLINE
| ID: mdl-22900519
ABSTRACT
We present a ZnO(1-x) nanorod array (NR)/ZnO thin film (TF) bilayer structure synthesized at a low temperature, exhibiting a uniquely rectifying characteristic as a homojunction diode and a resistive switching behavior as memory at different biases. The homojunction diode is due to asymmetric Schottky barriers at interfaces of the Pt/ZnO NRs and the ZnO TF/Pt, respectively. The ZnO(1-x) NRs/ZnO TF bilayer structure also shows an excellent resistive switching behavior, including a reduced operation power and enhanced performances resulting from supplements of confined oxygen vacancies by the ZnO(1-x) NRs for rupture and recovery of conducting filaments inside the ZnO TF layer. A hydrophobic behavior with a contact angle of ~125° can be found on the ZnO(1-x) NRs/ZnO TF bilayer structure, demonstrating a self-cleaning effect. Finally, a successful demonstration of complementary 1D1R configurations can be achieved by simply connecting two identical devices back to back in series, realizing the possibility of a low-temperature all-ZnO-based memory system.
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01-internacional
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MEDLINE
Assunto principal:
Semicondutores
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Óxido de Zinco
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Dispositivos de Armazenamento em Computador
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Nanotecnologia
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Nanoestruturas
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Eletrônica
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Membranas Artificiais
Idioma:
En
Revista:
ACS Nano
Ano de publicação:
2012
Tipo de documento:
Article
País de afiliação:
China