Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.
J Nanosci Nanotechnol
; 12(7): 5747-53, 2012 Jul.
Article
em En
| MEDLINE
| ID: mdl-22966647
ABSTRACT
A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
J Nanosci Nanotechnol
Ano de publicação:
2012
Tipo de documento:
Article