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Ultrafast optical technique for measuring the electrical dependence of the elasticity of piezoelectric thin film: demonstration on AlN.
Devos, A; Emery, P; Defay, E; Ben Hassine, N; Parat, G.
Afiliação
  • Devos A; Institut d'Électronique, de Microélectronique et de Nanotechnologie, Unité Mixte de Recherche CNRS 8250, Avenue Poincaré BP 69, F-59652 Villeneuve d'Ascq Cedex, France. arnaud.devos@isen.fr
Rev Sci Instrum ; 84(1): 015007, 2013 Jan.
Article em En | MEDLINE | ID: mdl-23387687
We present a technique based on ultrafast acoustics which permits us to measure the electrical dependence of the elastic properties of a thin piezoelectric layer. Ultrafast acoustics offers a unique way of measuring elastic properties of thin-layer in a non-destructive way using ultrashort optical pulses. We apply this technique to a thin layer to which a dc voltage is simultaneously applied. Both the film thickness and the sound velocity are affected. The two effects can be separated by use of a semi-transparent top electrode. A demonstration is made on a thin aluminum nitride (AlN). From that the d(33) piezoelectric coefficient and the stiffness variation induced by the bias in AlN are measured.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Rev Sci Instrum Ano de publicação: 2013 Tipo de documento: Article País de afiliação: França

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Rev Sci Instrum Ano de publicação: 2013 Tipo de documento: Article País de afiliação: França