Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics.
Nanotechnology
; 24(24): 245306, 2013 Jun 21.
Article
em En
| MEDLINE
| ID: mdl-23702835
ABSTRACT
InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2013
Tipo de documento:
Article