Polarity reversion of the operation mode of HfO2-based resistive random access memory devices by inserting Hf metal layer.
J Nanosci Nanotechnol
; 13(3): 1733-7, 2013 Mar.
Article
em En
| MEDLINE
| ID: mdl-23755581
ABSTRACT
The reversion of polarity within bipolar resistive switching operation occurs in Pt/HfO2/TiN and Pt/Hf/HfO2/TiN resistive random access memory devices. This reversion of voltage polarity is the result of interface generation which induces a conduction mechanism transformation from Poole-Frenkel emission to space charge limited current mechanism. To prove the reversion of polarity, this study uses curve fitting of I-V relations to verify the conduction mechanism theoretically and physical analysis to verify the oxygen ion distribution practically. The proposed Pt/Hf/HfO2/TiN devices exhibit good resistive switching characteristics, such as good uniformity, low voltage operation, robust endurance (10(3) dc sweep), and long retention (3 x 10(4) s at 85 degrees C).
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01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Clinical_trials
Idioma:
En
Revista:
J Nanosci Nanotechnol
Ano de publicação:
2013
Tipo de documento:
Article