Enhanced electroluminescence using Ta2O5/ZnO/HfO2 asymmetric double heterostructure in ZnO/GaN-based light emitting diodes.
Opt Express
; 22 Suppl 3: A833-41, 2014 May 05.
Article
em En
| MEDLINE
| ID: mdl-24922390
ABSTRACT
ZnO/GaN-based light-emitting diodes (LEDs) with improved asymmetric double heterostructure of Ta2O5/ZnO/HfO2 have been fabricated. Electroluminescence (EL) performance has been enhanced by the HfO2 electron blocking layer and further improved by continuing inserting the Ta2O5 hole blocking layer. The origins of the emission have been identified, which indicated that the Ta2O5/ZnO/HfO2 asymmetric structure could more effectively confine carriers in the active i-ZnO layer and meanwhile suppresses of radiation from GaN. This device exhibits superior stability in long-time running. It's hoped that the asymmetric double heterostructure may be helpful for the development of the future ZnO-based LEDs.
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01-internacional
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MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2014
Tipo de documento:
Article