Towards direct-gap silicon phases by the inverse band structure design approach.

Xiang, H J; Huang, Bing; Kan, Erjun; Wei, Su-Huai; Gong, X G

Xiang, H J; Huang, Bing; Kan, Erjun; Wei, Su-Huai; Gong, X G.

Afiliação

Xiang HJ; Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China and National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
Huang B; National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
Kan E; Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China.
Wei SH; National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
Gong XG; Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China.

Phys Rev Lett ; 110(11): 118702, 2013 Mar 15.

Article em En | MEDLINE | ID: mdl-25166584

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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2013 Tipo de documento: Article País de afiliação: Estados Unidos

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