Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.

Kerr, A J; Chagarov, E; Gu, S; Kaufman-Osborn, T; Madisetti, S; Wu, J; Asbeck, P M; Oktyabrsky, S; Kummel, A C

Kerr, A J; Chagarov, E; Gu, S; Kaufman-Osborn, T; Madisetti, S; Wu, J; Asbeck, P M; Oktyabrsky, S; Kummel, A C.

Afiliação

Kerr AJ; Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA.
Chagarov E; Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, USA.
Gu S; Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA.
Kaufman-Osborn T; Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, USA.
Madisetti S; Department of Nanoscale Science and Engineering, University at Albany-State University of New York, Albany, New York 12222, USA.
Wu J; Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA.
Asbeck PM; Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA.
Oktyabrsky S; Department of Nanoscale Science and Engineering, University at Albany-State University of New York, Albany, New York 12222, USA.
Kummel AC; Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, USA.

J Chem Phys ; 141(10): 104702, 2014 Sep 14.

Article em En | MEDLINE | ID: mdl-25217942

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: J Chem Phys Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Estados Unidos

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