Heterogeneous lasers and coupling to Si3N4 near 1060 nm.

ABSTRACT

A III-V/Si3N4 platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry-Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III-V to Si3N4 are measured to be 2.5±0.75 dB.