Defect Control and n-Doping of Encapsulated Graphene by Helium-Ion-Beam Irradiation.

Nanda, Gaurav; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Alkemade, Paul F A

Nanda, Gaurav; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Alkemade, Paul F A.

Afiliação

Nanda G; Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Goswami S; Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Watanabe K; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Taniguchi T; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Alkemade PF; Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.

Nano Lett ; 15(6): 4006-12, 2015 Jun 10.

Article em En | MEDLINE | ID: mdl-25965300

Palavras-chave

Helium ion microscopy; graphene; hexagonal boron nitride (h-BN); ion-induced damage; n-doping; self-healing

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2015 Tipo de documento: Article País de afiliação: Holanda

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