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Monolithic 3D CMOS Using Layered Semiconductors.
Sachid, Angada B; Tosun, Mahmut; Desai, Sujay B; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming.
Afiliação
  • Sachid AB; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Tosun M; Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Desai SB; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Hsu CY; Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Lien DH; Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720, USA.
  • Madhvapathy SR; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Chen YZ; Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Hettick M; Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720, USA.
  • Kang JS; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Zeng Y; Department of Material Sciences and Engineering, National Chao-Tung University, Hsinchu, 300, Taiwan.
  • He JH; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Chang EY; Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Chueh YL; Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
  • Javey A; Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
  • Hu C; Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Adv Mater ; 28(13): 2547-54, 2016 Apr 06.
Article em En | MEDLINE | ID: mdl-26833783
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos