Molecular ion sources for low energy semiconductor ion implantation (invited).

Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu

Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu.

Afiliação

Hershcovitch A; Brookhaven National Laboratory, Upton, New York 11973, USA.
Gushenets VI; High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
Seleznev DN; Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Bugaev AS; High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
Dugin S; State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow, Russia.
Oks EM; High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
Kulevoy TV; Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Alexeyenko O; State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow, Russia.
Kozlov A; Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Kropachev GN; Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Kuibeda RP; Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Minaev S; Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Vizir A; High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.
Yushkov GY; High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055, Russia.

Rev Sci Instrum ; 87(2): 02B702, 2016 Feb.

Article em En | MEDLINE | ID: mdl-26932065

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Rev Sci Instrum Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos

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