High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.

Li, Ling; Engel, Michael; Farmer, Damon B; Han, Shu-Jen; Wong, H-S Philip

Li, Ling; Engel, Michael; Farmer, Damon B; Han, Shu-Jen; Wong, H-S Philip.

Afiliação

Li L; Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States.
Engel M; IBM T. J. Watson Research Center , Yorktown Heights, New York 10598, United States.
Farmer DB; IBM T. J. Watson Research Center , Yorktown Heights, New York 10598, United States.
Han SJ; IBM T. J. Watson Research Center , Yorktown Heights, New York 10598, United States.
Wong HS; Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States.

ACS Nano ; 10(4): 4672-7, 2016 04 26.

Article em En | MEDLINE | ID: mdl-27023751

Palavras-chave

black phosphorus; metal contact; moisture; scandium; transistor; vacuum anneal

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos

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