Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes.
Sci Technol Adv Mater
; 12(6): 065004, 2011 Dec.
Article
em En
| MEDLINE
| ID: mdl-27877464
ABSTRACT
Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p+-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Sci Technol Adv Mater
Ano de publicação:
2011
Tipo de documento:
Article