Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering.

Jen, Shien-Uang; Sun, Hui; Chiang, Hai-Pang; Chen, Sheng-Chi; Chen, Jian-Yu; Wang, Xin

Jen, Shien-Uang; Sun, Hui; Chiang, Hai-Pang; Chen, Sheng-Chi; Chen, Jian-Yu; Wang, Xin.

Afiliação

Jen SU; Institute of Physics, Academia Sinica, Taipei 115, Taiwan. physjen@gate.sinica.edu.tw.
Sun H; Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 202, Taiwan. physjen@gate.sinica.edu.tw.
Chiang HP; Institute of Materials Science and Engineering, Ocean University of China, 238 Songling Road, Qingdao 266100, China. sunhuichn@hotmail.com.
Chen SC; Institute of Optoelectronic Science, National Taiwan Ocean University, Keelung 202, Taiwan. hpchiang@ntou.edu.tw.
Chen JY; Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan. chensc@mail.mcut.edu.tw.
Wang X; Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan. chensc@mail.mcut.edu.tw.

Materials (Basel) ; 9(12)2016 Dec 06.

Article em En | MEDLINE | ID: mdl-28774108

Palavras-chave

Ga-doped ZnO (GZO) thin films; electrical stability; optoelectronic properties; rf sputtering

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Taiwan

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