Effect of Interfacial Alloying versus "Volume Scaling" on Auger Recombination in Compositionally Graded Semiconductor Quantum Dots.

Park, Young-Shin; Lim, Jaehoon; Makarov, Nikolay S; Klimov, Victor I

Park, Young-Shin; Lim, Jaehoon; Makarov, Nikolay S; Klimov, Victor I.

Afiliação

Park YS; Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.
Lim J; Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87131, United States.
Makarov NS; Chemistry Division, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.
Klimov VI; Center for High Technology Materials, University of New Mexico , Albuquerque, New Mexico 87131, United States.

Nano Lett ; 17(9): 5607-5613, 2017 09 13.

Article em En | MEDLINE | ID: mdl-28776995

Palavras-chave

Semiconductor nanocrystal; interfacial alloy layer; lifetime blinking; quantum dot; single-dot spectroscopy; suppression of Auger recombination

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos

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