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The mechanism for the stabilization and surfactant properties of epitaxial silicene.
Curcella, A; Bernard, R; Borensztein, Y; Lazzeri, M; Prévot, G.
Afiliação
  • Curcella A; Sorbonne Universités, UPMC Univ Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, F-75005, Paris, France. prevot@insp.jussieu.fr.
Nanoscale ; 10(5): 2291-2300, 2018 Feb 01.
Article em En | MEDLINE | ID: mdl-29327018
ABSTRACT
Using real-time in situ scanning tunneling microscopy and density functional theory simulations, we have studied the growth of Si films on Ag(111) beyond the silicene monolayer, evidencing the existence of metastable phases and an original growth mechanism. Above monolayer Si coverage, an initial structure forms, which is identified as an Ag-free Si bilayer with additional Si adatoms. With further deposition, this structure is replaced by a distinct bilayer structure covered by Si trimers and Ag atoms. The formation of these bilayers follows counterintuitive dynamics they are partially inserted within the Ag substrate and form by expelling, from the underlying substrate, the atoms that reinsert below the adjacent silicene layer. The growth is therefore characterized by an unexpected "surfactant competition" between Ag and silicene while silicene is a metastable surfactant for the Ag(111) surface, Ag plays the role of a surfactant for thicker diamond-like Si islands. In spite of being thermodynamically unfavoured, the silicene monolayer is, thus, a remarkably stable structure because of the high kinetic barrier for the growth of thicker layers.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Ano de publicação: 2018 Tipo de documento: Article País de afiliação: França

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Ano de publicação: 2018 Tipo de documento: Article País de afiliação: França