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Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards.
Hu, Jiuning; Rigosi, Albert F; Kruskopf, Mattias; Yang, Yanfei; Wu, Bi-Yi; Tian, Jifa; Panna, Alireza R; Lee, Hsin-Yen; Payagala, Shamith U; Jones, George R; Kraft, Marlin E; Jarrett, Dean G; Watanabe, Kenji; Taniguchi, Takashi; Elmquist, Randolph E; Newell, David B.
Afiliação
  • Hu J; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA. hujiuning@gmail.com.
  • Rigosi AF; Joint Quantum Institute, University of Maryland, College Park, MD, 20742, USA. hujiuning@gmail.com.
  • Kruskopf M; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA. albert.rigosi@nist.gov.
  • Yang Y; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Wu BY; Joint Quantum Institute, University of Maryland, College Park, MD, 20742, USA.
  • Tian J; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Panna AR; Joint Quantum Institute, University of Maryland, College Park, MD, 20742, USA.
  • Lee HY; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Payagala SU; Graduate Institute of Applied Physics, National Taiwan University, Taipei, 10617, Taiwan.
  • Jones GR; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Kraft ME; Department of Physics and Astronomy, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, 47907, USA.
  • Jarrett DG; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Watanabe K; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Taniguchi T; Theiss Research, La Jolla, CA, 92037, USA.
  • Elmquist RE; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
  • Newell DB; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Sci Rep ; 8(1): 15018, 2018 Oct 09.
Article em En | MEDLINE | ID: mdl-30301948
ABSTRACT
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant [Formula see text] with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos