Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.

Key, Daryl; Letts, Edward; Tsou, Chuan-Wei; Ji, Mi-Hee; Bakhtiary-Noodeh, Marzieh; Detchprohm, Theeradetch; Shen, Shyh-Chiang; Dupuis, Russell; Hashimoto, Tadao

Key, Daryl; Letts, Edward; Tsou, Chuan-Wei; Ji, Mi-Hee; Bakhtiary-Noodeh, Marzieh; Detchprohm, Theeradetch; Shen, Shyh-Chiang; Dupuis, Russell; Hashimoto, Tadao.

Afiliação

Key D; SixPoint Materials, Inc., Buellton, CA 93427, USA. daryl@spmaterials.com.
Letts E; SixPoint Materials, Inc., Buellton, CA 93427, USA. ed@spmaterials.com.
Tsou CW; Georgia Institute of Technology, Atlanta, GA 30332, USA. chuan-wei.tsou@ece.gatech.edu.
Ji MH; Georgia Institute of Technology, Atlanta, GA 30332, USA. mihee.ji@gatech.edu.
Bakhtiary-Noodeh M; Georgia Institute of Technology, Atlanta, GA 30332, USA. Bakhtiary.marzieh@gatech.edu.
Detchprohm T; Georgia Institute of Technology, Atlanta, GA 30332, USA. theeradetch.detchprohm@ece.gatech.edu.
Shen SC; Georgia Institute of Technology, Atlanta, GA 30332, USA. shensc@ece.gatech.edu.
Dupuis R; Georgia Institute of Technology, Atlanta, GA 30332, USA. dupuis@gatech.edu.
Hashimoto T; SixPoint Materials, Inc., Buellton, CA 93427, USA. tadao@spmaterials.com.

Materials (Basel) ; 12(12)2019 Jun 14.

Article em En | MEDLINE | ID: mdl-31207922

Palavras-chave

GaN; NEAT; ammonothermal; bulk; power devices; substrates

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos

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