Quantized Field-Effect Tunneling between Topological Edge or Interface States.
Phys Rev Lett
; 123(20): 206801, 2019 Nov 15.
Article
em En
| MEDLINE
| ID: mdl-31809113
ABSTRACT
We study the tunneling through a two-dimensional topological insulator with topologically protected edge states. It is shown that the tunneling probability can be quantized in a broad parameter range, 0 or 1, tuned by an applied transverse electric field. Based on this field-effect tunneling, we propose two types of topological transistors based on helical edge or interface states of quantum spin Hall insulators separately. The quantized tunneling conductance is obtained and shown to be robust against nonmagnetic disorders. Usually, the topological transition is necessary in the operation of topological transistors. These findings provide a new strategy for the design of topological transistors without topological transitions.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2019
Tipo de documento:
Article
País de afiliação:
China