Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency.
Opt Express
; 27(26): 38413-38420, 2019 Dec 23.
Article
em En
| MEDLINE
| ID: mdl-31878609
ABSTRACT
We report on the demonstration of top emitting AlGaN tunnel junction deep ultraviolet (UV) light emitting didoes (LEDs) operating at â¼267 nm. We show, both theoretically and experimentally, that the light extraction efficiency can be enhanced by nearly a factor of two with the incorporation of AlGaN nanowire photonic crystal structures. A peak wall-plug efficiency (WPE) â¼3.5% and external quantum efficiency (EQE) â¼5.4% were measured for AlGaN LEDs directly on-wafer without any packaging. This work demonstrates a viable path for achieving high efficiency deep UV LEDs through the integration of AlGaN planar and nanoscale structures.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2019
Tipo de documento:
Article