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Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers.
Scuri, Giovanni; Andersen, Trond I; Zhou, You; Wild, Dominik S; Sung, Jiho; Gelly, Ryan J; Bérubé, Damien; Heo, Hoseok; Shao, Linbo; Joe, Andrew Y; Mier Valdivia, Andrés M; Taniguchi, Takashi; Watanabe, Kenji; Loncar, Marko; Kim, Philip; Lukin, Mikhail D; Park, Hongkun.
Afiliação
  • Scuri G; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Andersen TI; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Zhou Y; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Wild DS; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Sung J; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Gelly RJ; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Bérubé D; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Heo H; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Shao L; Department of Physics, California Institute of Technology, Pasadena, California 91125, USA.
  • Joe AY; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Mier Valdivia AM; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Taniguchi T; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Watanabe K; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Loncar M; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
  • Kim P; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Lukin MD; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Park H; John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.
Phys Rev Lett ; 124(21): 217403, 2020 May 29.
Article em En | MEDLINE | ID: mdl-32530686
ABSTRACT
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe_{2}/WSe_{2} bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than 3 orders of magnitude via electrostatic doping, enabling switching of the DOCP from ∼80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos