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Femtosecond Pulse Ablation Assisted Mg-ZnO Nanoparticles for UV-Only Emission.
Sahoo, Anubhab; Miryala, Muralidhar; Dixit, Tejendra; Klimkowicz, Alicja; Francis, Bellarmine; Murakami, Masato; Rao, Mamidanna Sri Ramachandra; Krishnan, Sivarama.
Afiliação
  • Sahoo A; Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
  • Miryala M; Superconducting Material Laboratory, Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-Ku, Tokyo 135-8546, Japan.
  • Dixit T; Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
  • Klimkowicz A; Department of Electronics and Communication Engineering, Indian Institute of Information Technology Design and Manufacturing Kancheepuram, Chennai 600127, India.
  • Francis B; Department of Engineering Science and Mechanics, Shibaura Institute of Techno.logy, 3-7-5 Toyosu, Koto-Ku, Tokyo 135-8546, Japan.
  • Murakami M; Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
  • Rao MSR; Superconducting Material Laboratory, Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-Ku, Tokyo 135-8546, Japan.
  • Krishnan S; Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
Nanomaterials (Basel) ; 10(7)2020 Jul 06.
Article em En | MEDLINE | ID: mdl-32640733
The need for improved UV emitting luminescent materials underscored by applications in optical communications, sterilization and medical technologies is often addressed by wide bandgap semiconducting oxides. Among these, the Mg-doped ZnO system is of particular interest as it offers the opportunity to tune the UV emission by engineering its bandgap via doping control. However, both the doped system and its pristine congener, ZnO, suffer from being highly prone to parasitic defect level emissions, compromising their efficiency as light emitters in the ultraviolet region. Here, employing the process of femtosecond pulsed laser ablation in a liquid (fs-PLAL), we demonstrate the systematic control of enhanced UV-only emission in Mg-doped ZnO nanoparticles using both photoluminescence and cathodoluminescence spectroscopies. The ratio of luminescence intensities corresponding to near band edge emission to defect level emission was found to be six-times higher in Mg-doped ZnO nanoparticles as compared to pristine ZnO. Insights from UV-visible absorption and Raman analysis also reaffirm this defect suppression. This work provides a simple and effective single-step methodology to achieve UV-emission and mitigation of defect emissions in the Mg-doped ZnO system. This is a significant step forward in its deployment for UV emitting optoelectronic devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Índia

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Índia