Atomic defect classification of the H-Si(100) surface through multi-mode scanning probe microscopy.

Croshaw, Jeremiah; Dienel, Thomas; Huff, Taleana; Wolkow, Robert

Croshaw, Jeremiah; Dienel, Thomas; Huff, Taleana; Wolkow, Robert.

Afiliação

Croshaw J; Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2J1, Canada.
Dienel T; Quantum Silicon, Inc., Edmonton, Alberta, T6G 2M9, Canada.
Huff T; Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2J1, Canada.
Wolkow R; Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853, USA.

Beilstein J Nanotechnol ; 11: 1346-1360, 2020.

Article em En | MEDLINE | ID: mdl-32974113

Palavras-chave

atomic force microscopy; hydrogen-terminated silicon; scanning tunnelling hydrogen microscopy; scanning tunnelling microscopy; surface metrology

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Beilstein J Nanotechnol Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Canadá

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