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Observation of nonreciprocal magnetophonon effect in nonencapsulated few-layered CrI3.
Liu, Zhen; Guo, Kai; Hu, Guangwei; Shi, Zhongtai; Li, Yue; Zhang, Linbo; Chen, Haiyan; Zhang, Li; Zhou, Peiheng; Lu, Haipeng; Lin, Miao-Ling; Liu, Sizhao; Cheng, Yingchun; Liu, Xue Lu; Xie, Jianliang; Bi, Lei; Tan, Ping-Heng; Deng, Longjiang; Qiu, Cheng-Wei; Peng, Bo.
Afiliação
  • Liu Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Guo K; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Hu G; Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore.
  • Shi Z; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Li Y; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Chen H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Zhang L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Lu H; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Lin ML; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
  • Liu S; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
  • Cheng Y; Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.
  • Liu XL; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
  • Xie J; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Bi L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
  • Tan PH; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
  • Deng L; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China. bo_peng@uestc.edu.cn chengwei.qiu@nus.edu.sg denglj@uestc.edu.cn.
  • Qiu CW; Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore. bo_peng@uestc.edu.cn chengwei.qiu@nus.edu.sg denglj@uestc.edu.cn.
  • Peng B; National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China. bo_peng@uestc.edu.cn chengwei.qiu@nus.edu.sg denglj@uestc.edu.cn.
Sci Adv ; 6(43)2020 Oct.
Article em En | MEDLINE | ID: mdl-33097544
"Magneto-optical" effect refers to a rotation of polarization plane, which has been widely studied in traditional ferromagnetic metal and insulator films and scarcely in two-dimensional layered materials. Here, we uncover a new nonreciprocal magnetophonon Raman scattering effect in ferromagnetic few-layer CrI3 We observed a rotation of the polarization plane of inelastically scattered light between -20o and +60o that are tunable by an out-of-plane magnetic field from -2.5 to 2.5 T. It is experimentally observed that the degree of polarization can be magnetically manipulated between -20 and 85%. This work raises a new magneto-optical phenomenon and could create opportunities of applying two-dimensional ferromagnetic materials in Raman lasing, topological photonics, and magneto-optical modulator for information transport and storage.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2020 Tipo de documento: Article País de afiliação: China
Texto completo
Imprimir
XML
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2020 Tipo de documento: Article País de afiliação: China