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Optically Detected Magnetic Resonance in Neutral Silicon Vacancy Centers in Diamond via Bound Exciton States.
Zhang, Zi-Huai; Stevenson, Paul; Thiering, Gergo; Rose, Brendon C; Huang, Ding; Edmonds, Andrew M; Markham, Matthew L; Lyon, Stephen A; Gali, Adam; de Leon, Nathalie P.
Afiliação
  • Zhang ZH; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Stevenson P; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Thiering G; Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary.
  • Rose BC; Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary.
  • Huang D; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Edmonds AM; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Markham ML; Element Six, Harwell OX11 0QR, United Kingdom.
  • Lyon SA; Element Six, Harwell OX11 0QR, United Kingdom.
  • Gali A; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • de Leon NP; Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary.
Phys Rev Lett ; 125(23): 237402, 2020 Dec 04.
Article em En | MEDLINE | ID: mdl-33337180
Neutral silicon vacancy (SiV^{0}) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV^{0} centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV^{0} as well as other emerging defect systems.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos