Probing Metastable Space-Charge Potentials in a Wide Band Gap Semiconductor.
Phys Rev Lett
; 125(25): 256602, 2020 Dec 18.
Article
em En
| MEDLINE
| ID: mdl-33416343
ABSTRACT
While the study of space-charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide band gap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape-and concomitant field-can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space-charge field, which we then exploit to show space-charge-induced carrier guiding.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Prognostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2020
Tipo de documento:
Article
País de afiliação:
Estados Unidos