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Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates.
Kim, Zin-Sig; Lee, Hyung-Seok; Bae, Sung-Bum; Ahn, Hokyun; Lee, Sang-Heung; Lim, Jong-Won; Kang, Dong Min.
Afiliação
  • Kim ZS; Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea.
  • Lee HS; Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea.
  • Bae SB; Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea.
  • Ahn H; Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea.
  • Lee SH; Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea.
  • Lim JW; Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea.
  • Kang DM; Information and Communications Technology Materials & Components & Research Laboratory, Electronics and Telecommunications Research Institute, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, Korea.
J Nanosci Nanotechnol ; 21(8): 4429-4433, 2021 Aug 01.
Article em En | MEDLINE | ID: mdl-33714339
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2021 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2021 Tipo de documento: Article