2D XBiSe<sub>3</sub>(X = Ga, In, Tl) monolayers with high carrier mobility and enhanced visible-light absorption.

Zhan, Li-Bo; Yang, Chuan-Lu; Wang, Mei-Shan; Ma, Xiao-Guang

2D XBiSe₃(X = Ga, In, Tl) monolayers with high carrier mobility and enhanced visible-light absorption.

Zhan, Li-Bo; Yang, Chuan-Lu; Wang, Mei-Shan; Ma, Xiao-Guang.

Afiliação

Zhan LB; Basic Medical College, Binzhou Medical University, Yantai 264003, China; College of Physics and Engineering, Qufu Normal University, Qufu 273165, China. Electronic address: zhanlibo@bzmc.edu.cn.
Yang CL; School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China. Electronic address: ycl@ldu.edu.cn.
Wang MS; School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China.
Ma XG; School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China.

Spectrochim Acta A Mol Biomol Spectrosc ; 264: 120309, 2022 Jan 05.

Article em En | MEDLINE | ID: mdl-34479026

Palavras-chave

Bandgap; Mobility; Monolayer; Optical absorption; Strain engineering

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Spectrochim Acta A Mol Biomol Spectrosc Assunto da revista: BIOLOGIA MOLECULAR Ano de publicação: 2022 Tipo de documento: Article

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