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Doping Approaches for Organic Semiconductors.
Scaccabarozzi, Alberto D; Basu, Aniruddha; Aniés, Filip; Liu, Jian; Zapata-Arteaga, Osnat; Warren, Ross; Firdaus, Yuliar; Nugraha, Mohamad Insan; Lin, Yuanbao; Campoy-Quiles, Mariano; Koch, Norbert; Müller, Christian; Tsetseris, Leonidas; Heeney, Martin; Anthopoulos, Thomas D.
Afiliação
  • Scaccabarozzi AD; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.
  • Basu A; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.
  • Aniés F; Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K.
  • Liu J; Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden.
  • Zapata-Arteaga O; Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain.
  • Warren R; Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
  • Firdaus Y; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.
  • Nugraha MI; Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung 40135, Indonesia.
  • Lin Y; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.
  • Campoy-Quiles M; King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.
  • Koch N; Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain.
  • Müller C; Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekulé-Strasse 5, 12489 Berlin, Germany.
  • Tsetseris L; Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany.
  • Heeney M; Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden.
  • Anthopoulos TD; Department of Physics, National Technical University of Athens, Athens GR-15780, Greece.
Chem Rev ; 122(4): 4420-4492, 2022 Feb 23.
Article em En | MEDLINE | ID: mdl-34793134
ABSTRACT
Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chem Rev Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Arábia Saudita

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chem Rev Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Arábia Saudita